High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence

IEEE Journal of Quantum Electronics

Volumn 41, Issue 11, 2005, Pages 1341-1348

  Maximov, Mikhail V ^a   Shernyakov, Yuri M ^a   Novikov, Innokenty I ^a   Kuznetsov, Sergey M ^a   Karachinsky, Leonid Ya ^a   Gordeev, Nikita Yu ^a   Kalosha, Vladimir P ^b   Shchukin, Vitaly A ^c   Ledentsov, Nikolai N ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF OTTAWA   (Canada)

^c NL Nanosemiconductor GmbH   (Germany)

Author keywords

Beam divergence; Longitudinal photonic bandgap crystal (LPBC); Quantum well; Semiconductor laser

Indexed keywords

CURRENT DENSITY; EPITAXIAL GROWTH; OPTICAL WAVEGUIDES; QUANTUM EFFICIENCY; RESONANT TUNNELING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

BEAM DIVERGENCE; LEAKAGE LOSS; LONGITUDINAL PHOTONIC BANDGAP CRYSTAL (LPBC);

SEMICONDUCTOR LASERS;

EID: 27744447898     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2005.857066     Document Type: Article

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