Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure

IEEE Photonics Technology Letters

Volumn 8, Issue 12, 1996, Pages 1588-1590

  Lin, Gray ^b   Yen, Shun Tung ^b   Lee, Chien Ping ^a,b   Liu, Der Cherng ^c  

^a IEEE

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c Ministry of Transportation and Communications Taiwan   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); COMPOSITION EFFECTS; ELECTRIC CURRENTS; LASER MODES; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

FAR FIELD ANGLE; THRESHOLD CURRENTS;

QUANTUM WELL LASERS;

EID: 0030420974     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.544686     Document Type: Article

References (7)

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2. Y. C. Chen, R. G. Waters, and R. J. Dalby, "Single quantum-well laser with 11.2 degree transverse beam divergence," Electron. Lett., vol. 26, pp. 1348-1350, 1990.
3. T. M. Cockerill, J. Honig, T. A. DeTemple, and J. J. Coleman, "Depressed index cladding graded barrier separate confinement single quantum well heterostructure laser," Appl. Phys. Lett., vol. 59, pp. 2694-2696, 1991.
4. M. Ziari, J.-M. Verdiell, and D. F. Welch, "Low-loss coupling of 980 nm GaAs laser to cleaved single mode fiber," in Proc. IEEE Lasers Electro-Opt. Soc. Annu. Meet., LEOS'95, San Francisco, CA, Oct. 1995, pp. 5-6.
5. T. Temmyo and M. Sugo, "Design of high-power strained InGaAs/AlGaAs quantum well lasers with a vertical divergence angle of 18°," Electron. Lett., vol. 31, pp. 642-644, 1995.
6. S. T. Yen and C. P. Lee, "Theoretical investigation on semiconductor lasers with passive waveguides."IEEE J. Quantum Electron., vol. 32, pp. 4-13, 1996.
7. S. T. Yen and C. P. Lee, "A novel cladding structure for semiconductor quantum well lasers with small beam divergence and low threshold current," IEEE J. Quantum Electron., vol. 32, pp. 1588-1595, 1996.