Modal analysis of large spot size, low output beam divergence quantum-dot lasers

IEEE Photonics Technology Letters

Volumn 19, Issue 12, 2007, Pages 916-918

  Corbett, Brian ^a   Lambkin, Paul ^a   O'Callaghan, James ^a   Deubert, Stefan ^b   Kaiser, Wolfgang ^b   Reithmaier, Johann Peter ^c   Forchel, Alfred ^b  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b UNIVERSITY OF WÜRZBURG   (Germany)

^c UNIVERSITY OF KASSEL   (Germany)

Author keywords

Large optical cavity (LOC); Low divergence; Quantum dot (QD) lasers

Indexed keywords

MODAL ANALYSIS; OPTICAL GAIN; OPTICAL WAVEGUIDES; REFRACTIVE INDEX; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS;

LARGE OPTICAL CAVITY (LOC); LOW DIVERGENCE; QUANTUM-DOT (QD) LASERS; RIDGE WAVEGUIDE LASERS;

LASER BEAMS;

EID: 34249930519     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.897569     Document Type: Article

References (9)

1. N. Kirstaedter, N. N. Ledentsov, M. Grundmann, D. Bimberg, V. M. Ustinov, S. S. Ruvimov, M. V. Maximov, P. S. Kop'ev, Z. I. Alferov, U. Richter, P. Werner, U. Gosele, and J. Heydenreich, "Low threshold, large To injection laser emission from (InGa)As quantum dots," Electron. Lett., vol. 30, pp. 1416-1417, 1994.
2. D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe, "1.3 μm room-temperature GaAs-based quantum-dot laser," Appl. Phys. Lett., vol. 73, pp. 2564-2566, 1998.
3. 0.85 As quantum well," Electron. Lett., vol. 35, no. 14, pp. 1163-1165, Jul. 1999.
4. F. Schäfer, J. P. Reithmaier, and A. Forchel, "High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer," Appl. Phys. Lett., vol. 74, pp. 2915-2917, 1999.
5. B. Sumpf, S. Deubert, G. Erbert, J. Fricke, J. P. Reithmaier, A. Forchel, R. Staske, and G. Trankle, "High-power 980 nm quantum dot broad area lasers," Electron. Lett., vol. 39, no. 23, pp. 1655-1657, 2003.
6. J. Muszalski, J. Houlihan, G. Huyet, and B. Corbett, "Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm," Electron. Lett., vol. 40, no. 7, pp. 428-430, Apr. 2004.
7. F. Klopf, S. Deubert, J. P. Reithmaier, and A. Forchel, "Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers," Appl. Phys. Lett., vol. 81, no. 2, pp. 217-219, Jul. 2002.
8. S. P. Pogossian, L. Vescan, and A. Vonsovici, "The single-mode condition for semiconductor rib waveguides with large cross section," J. Lightw. Technol., vol. 16, no. 10, pp. 1851-1853, Oct. 1998.
9. P. K. L. Chan, K. P. Pile, J. J. Plant, R. B. Swint, and P. W. Judodawlkis, "Temperature mapping and thermal lensing in large-mode, high power laser diodes," Appl. Phys. Lett., vol. 89, p. 201110, 2006.