High-power and low-divergence 980-nm InGaAs-GaAsP-AlGaAs strain-compensated quantum-well diode laser grown by MOCVD

IEEE Photonics Technology Letters

Volumn 15, Issue 11, 2003, Pages 1507-1509

  Zhao, Jun ^a   Li, Larry ^a,b   Wang, Wumin ^a   Lu, Yicheng ^c  

^a Multiplex Inc   (United States)

^b RF MICRO DEVICES   (United States)

^c RUTGERS UNIVERSITY   (United States)

Author keywords

Coupling efficiency; Device reliability; Kink power; Laser beam; Quantum well lasers; Ridge waveguide

Indexed keywords

HIGH POWER LASERS; LASER MODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SINGLE MODE FIBERS; WAVEGUIDES;

COUPLING EFFICIENCY; QUANTUM WELL DIODE LASER; RIDGE WAVEGUIDE;

SEMICONDUCTOR LASERS;

EID: 0242365673     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2003.818660     Document Type: Article

References (8)

1. J. H. Lee, W. J. Lee, and N. Park, "Comparative study of temperature-dependent multichannel gain and noise figure distortion for 1.48- and 0.98-μm pumped EDFAs," IEEE Photon. Technol. Lett., vol. 10, pp. 1721-1723, Dec. 1998.
2. G. Zhang, A. Ovtchinnikov, J. Näppi, H. Asonen, and M. Pessa, "Optimization and characteristics of Al-free strained-layer InGaAs/GaInAsP/GaInP SCH-QW lasers (λ ∼ 980 nm) grown by gas-source MBE," IEEE J. Quantum Electron., vol. 29, pp. 1943-1949, June 1993.
3. G. W. Yang, R. J. Hwu, Z. T. Xu, and X. Y. Ma, "Design consideration and performance of high-power and high-brightness InGaAs-In-GaAsP-AlGaAs quantum-well diode lasers (λ = 0.98 μm)," IEEE J. Select. Topics Quantum Electron., vol. 6, pp. 577-584, July/Aug. 2000.
4. Y. C. Chen, R. G. Waters, and R. J. Dalby, "Single quantum well lasers with vertically integrated passive waveguides," Appl. Phys. Lett., vol. 56, pp. 1409-1411, 1990.
5. M. C. Wu, Y. K. Chen, M. Hong, J. P. Mannaerts, M. A. Chin, and A. M. Sergent, "A periodic index separate confinement heterostructure quantum well laser," Appl. Phys. Lett., vol. 59, pp. 1046-1048, 1991.
6. G. Lin, S. T. Ten, C. P. Lee, and D. C. Liu, "Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure," IEEE Photon. Technol. Lett., vol. 8, pp. 1588-1590, Dec. 1996.
7. K. Shigihara, K. Kawasaki, Y. Yoshida, S. Yamamura, T. Yagi, and E. Omura, "High-power 980-nm ridge waveguide laser diodes including an asymmetrically expanded optical field normal to the active layer," IEEE J. Quantum Electron., vol. 38, pp. 1081-1088, Aug. 2002.
8. N. K. Dutta, W. S. Hobson, D. Vakhshoori, H. Han, P. N. Freeman, J. F. de Jong, and J. Lopata, "Strain compensated InGaAs-GaAsP-InGaP laser," IEEE Photon. Technol. Lett., vol. 8, pp. 852-854, July 1996.