Line Depletion Electromigration Characterization of Cu Interconnects

IEEE Transactions on Device and Materials Reliability

Volumn 4, Issue 1, 2004, Pages 80-85

  Li, Baozhen ^a   Sullivan, Timothy D ^a   Lee, Tom C ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

Cu interconnect; Electromigration (EM); Line depletion; Liner; Redundancy; Reliability; Ta; Via; Void

Indexed keywords

ADHESION; COPPER; CURRENT DENSITY; DIFFUSION; ELECTRON TRANSITIONS; INTERFACES (MATERIALS); SILICON NITRIDE;

CU INTERCONNECTS; LINE DEPLETION; LINER; VIA; VOID;

ELECTROMIGRATION;

EID: 2342631908     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2003.822340     Document Type: Conference Paper

References (7)

1. J. Lloyd, M. W. Lane, and E. Liniger, "Adhesion and electromigration in Cu interconnect," in IEEE Int. Integrated Reliability Workshop Final Report, Lake Tahoe, CA, Oct. 2002, pp. 32-35.
2. C. Goldberg et al., "Interface reliability of high performance interconnects," in Proc. Advanced Metallization Conf., San Diego, CA, Oct. 2002, pp. 127-137.
3. A. H. Fischer, A. Glasow, S. Penka, and F. Ungar, "Electromigration failure mechanism studies on copper interconnects," in Proc. IEEE Int. Interconnect Technology Conf., 2002, pp. 139-141.
4. J. Gill, T. Sullivan, S. Yankee, H. Barth, and A. Glasow, "Investigation of via-dominated multimodal EM failure distributions in dual damascene Cu interconnects with a discussion of the statistical implications," in Proc. 40th IEEE Reliability Physics Symp., 2002, pp. 298-304.
5. C.-K. Hu, L. Gignac, E. Liniger, R. Rosenberg, and A. Stamper, "Bi-modal EM mechanisms in dual-damascene Cu line/via on W," in Proc. IEEE Int. Interconnect Technology Conf., 2002, pp. 133-135.
6. "Foundry Process Qualification Guidelines," JEDEC/FSA, Joint Publication JP-001, Sept. 2002.
7. D. Edelstein et al., "A high performance liner for copper damascene interconnects," in Proc. IEEE Int. Interconnect Technology Conf., 2001, pp. 9-11.