X-ray diffraction and x-ray photoelectron spectroscopy study of partially strained SiGe layers produced via excimer laser processing

Journal of Applied Physics

Volumn 82, Issue 1, 1997, Pages 147-154

  Martelli, S ^a   Vianey, I ^a   Larciprete, R ^a   Borsella, E ^a   Castro, J ^b   Chiussi, S ^b   Leon B ^b  

^a ENEA   (Italy)

^b UNIVERSITY OF VIGO   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; AMORPHOUS MATERIALS; CRYSTAL STRUCTURE; CRYSTALLIZATION; EPITAXIAL GROWTH; EXCIMER LASERS; MELTING; MONTE CARLO METHODS; PULSED LASER APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

PULSED LASER INDUCED EPITAXY; STRAINED LAYERS;

HETEROJUNCTIONS;

EID: 0031192642     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365793     Document Type: Article

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