Parasitic S/D resistance effects on hot-carrier reliability in body-tied FinFETs

IEEE Electron Device Letters

Volumn 27, Issue 6, 2006, Pages 514-516

  Han, Jin Woo ^a   Lee, Choong Ho ^b   Park, Donggun ^b   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Hot carrier effects (HCEs); Interface states; Multiple gate FinFETs; Oxide trapped charges; Parasitic source drain (S D) resistance

Indexed keywords

CARRIER MOBILITY; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE MEASUREMENT; FIELD EFFECT TRANSISTORS; HOT CARRIERS;

HOT-CARRIER EFFECTS; INTERFACE STATES; OXIDE-TRAPPED CHARGES; PARASITIC SOURCE/DRAIN RESISTANCE;

SEMICONDUCTOR DEVICE TESTING;

EID: 33744757024     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.875721     Document Type: Article

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