Silicon monoxide clusters: The favorable precursors for forming silicon nanostructures

Physical Review Letters

Volumn 93, Issue 9, 2004, Pages

  Zhang, R Q ^a,b   Zhao, M W ^a   Lee, S T ^a,b  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; APPROXIMATION THEORY; BINDING ENERGY; CHEMICAL BONDS; COMPUTER SIMULATION; CRYSTAL STRUCTURE; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; NUCLEATION; PHASE TRANSITIONS; PROBABILITY DENSITY FUNCTION; SILICON COMPOUNDS;

BOND LENGTH; SILICON NANOSTRUCTURES; STRUCTURAL TRANSITIONS; TETRAHEDRAL STRUCTURE;

NANOSTRUCTURED MATERIALS;

EID: 19544393728     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.095503     Document Type: Article

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