Enhancement of luminescence from encapsulated Si nanocrystals in SiO 2 with rapid thermal anneals

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 230, Issue 1-4, 2005, Pages 203-209

  Shimizu Iwayama, Tsutomu ^a   Hama, Takayuki ^a   Hole, David E ^b   Boyd, Ian W ^c  

^a AICHI UNIVERSITY OF EDUCATION   (Japan)

^b UNIVERSITY OF SUSSEX   (United Kingdom)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

Ion implantation; Nanocrystals; Photoluminescence; Rapid thermal anneal; Silicon

Indexed keywords

ABSORPTION SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; ENCAPSULATION; INTERFACIAL ENERGY; ION IMPLANTATION; LASER ABLATION; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; PHOTONS; PRECIPITATION (CHEMICAL); RAPID THERMAL ANNEALING; SILICA; SILICON;

ACCELERATION ENERGY; PEAK ENERGY; PHOTOLUMINESCENCE EMISSION; PHOTOLUMINESCENCE SPECTRA;

PHOTOLUMINESCENCE;

EID: 14744301976     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.12.041     Document Type: Conference Paper

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