Influence of V/III flux ratio on electrical properties of AlInGaN/Gan heterostructures grown by MOCVD

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 211-214

  Yu, Tongjun ^a   Pan, Yaobo ^a   Yang, Zhijian ^a   Xu, Ke ^a   Zhang, Guoyi ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

A1. Atomic force micrograph; A1. Rutherford backscattering spectroscopy; A3. Metal organic chemical vapor deposition; B1. AlInGaN GaN heterostructures

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC PROPERTIES; GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALINGAN/GAN HETEROSTRUCTURES; ATOMIC FORCE MICROGRAPH; FLUX RATIOS; TEMPLATE LAYERS;

HETEROJUNCTIONS;

EID: 33846526057     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.020     Document Type: Article

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