Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 11, 2005, Pages 7916-7918

  Chang, Yi An ^a   Luo, Chuan Yu ^a   Kuo, Hao Chung ^a   Kuo, Yen Kuang ^b   Lin, Chia Feng ^c   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^c NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Electronic blocking layer; Leakage current; Numerical simulation; Quaternary InAlGaN alloys; Semiconductor lasers

Indexed keywords

ALUMINUM; COMPOSITION; COMPUTER SIMULATION; INDIUM ALLOYS; LEAKAGE CURRENTS; QUANTUM WELL LASERS; SEMICONDUCTOR LASERS; TEMPERATURE DISTRIBUTION;

ELECTRONIC BLOCKING LAYER; QAUTERNARY INALGN ALLOY;

INDIUM COMPOUNDS;

EID: 31544440957     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.7916     Document Type: Article

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