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Volumn 275, Issue 1-2, 2005, Pages

Effect of thermal damage on optical and structural properties of In 0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD

(14) Lee, Sung Nam a,b Son, Joongkon a Paek, Hosun a Sakong, Tan a Lee, Wonseok a Kim, Kihong a Yoon, Euijoon b Kim, Jiyoung c Cho, Yong Hoon c Lee, Yoonjae d Kim, Sangsoo d Noh, Doyoung d Nam, Okhyun a Park, Yongjo a

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

b Seoul National University (South Korea)

c Chungbuk National University (South Korea)

d Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

A1 High resolution X ray diffraction; A1. Atomic force microscopy; A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

ATOMIC FORCE MICROSCOPY; HEAT TREATMENT; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION;

HIGH-RESOLUTION X-RAY DIFFRACTION; LOCALIZATION EFFECTS; MULTI-QUANTUM WELLS (MQW); THERMAL DAMAGE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 20144379011 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.11.135 Document Type: Conference Paper

Times cited : (8)

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