Chemical composition and elastic strain in AlInGaN quaternary films

Thin Solid Films

Volumn 515, Issue 4, 2006, Pages 1429-1432

  Zhou, Shengqiang ^a   Wu, M F ^a   Yao, S D ^a   Liu, J P ^b   Yang, H ^b  

^a PEKING UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

III V semiconductors; Quaternary compounds; Rutherford backscattering spectroscopy; Stress; X ray diffraction

Indexed keywords

GALLIUM NITRIDE; LATTICE CONSTANTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STRAIN;

ELASTIC RECOIL DETECTION ANALYSIS; III-V SEMICONDUCTORS; QUATERNARY COMPOUNDS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33750817628     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.04.005     Document Type: Article

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