Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire

Journal of Crystal Growth

Volumn 259, Issue 3, 2003, Pages 245-251

  Liu, Yang ^a   Egawa, Takashi ^a   Ishikawa, Hiroyasu ^a   Jimbo, Takashi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III V materials; B2. Semiconducting quaternary alloy

Indexed keywords

CRYSTAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SAPPHIRE;

EPILAYERS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0142095023     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.07.014     Document Type: Article

References (19)

1. Aumer M.E., LeBoeuf S.F., McIntosh F.G., Bedair S.M. Appl. Phys. Lett. 75:1999;3315.
2. Nagahama S., Yanamoto T., Sano M., Mukai T. Jpn. J. Appl. Phys. 40:2001;L788.
3. Nagahama S., Yanamoto T., Sano M., Mukai T. Jpn. J. Appl. Phys. 41:2002;5.
4. Wang T., Liu Y.H., Lee Y.B., Ao J.P., Bai J., Sakai S. Appl. Phys. Lett. 81:2002;2508.
5. Yasan A., McClintock R., Mayes K., Darvish S.R., Kung P., Razeghi M. Appl. Phys. Lett. 81:2002;801.
6. Khan M.A., Adivarahan V., Zhang J.P., Chen C.Q., Kuokstis E., Chitnis A., Shatalov M., Yang J.W., Simin G. Jpn. J. Appl. Phys. 40:2001;L1308.
7. Shatalov M., Chitnis A., Adivarahan V., Lunev A., Zhang J., Yang J.W., Fareed Q., Simin G., Zakheim A., Asif Khan M. Appl. Phys. Lett. 78:2001;817.
8. Zhang J., Kuokstis E., Fareed Q., Wang H., Yang J., Simin G., Asif Khan M. Appl. Phys. Lett. 79:2002;925.
9. Chen C.-H., Huang L.-Y., Chen Y.-F. Appl. Phys. Lett. 80:2002;1397.
10. Hirayama H., Kinoshita A., Yamabi T., Enomoto Y., Hirata A., Araki T., Nanishi Y., Aoyagi Y. Appl. Phys. Lett. 80:2002;207.
11. Guo S.P., Pophristic M., Peres B., Ferguson I.T. J. Crystal Growth. 252:2003;486.
12. Li J., Nam K.B., Kim K.H., Lin J.Y., Jiang H.X. Appl. Phys. Lett. 78:2001;61.
13. Han J., Figiel J.J., Petersen G.A., Myers S.M., Crawford M.H., Banas M.A. Jpn. J. Appl. Phys. 39:2000;2372.
14. Huang J.S., Dong X., Luo X.D., Luo D.B., Li D.B., Liu X.L., Xu Z.Y., Ge W.K. J. Crystal Growth. 247:2003;84.
15. O. Ambacher, J. Phys. D 31 (1998) 2653.
16. Asif Khan M., Yang J.W., Simin G., Zur Loye H., Bicknell-Tassius R., Gaska R., Shur S., Tamulaitis G., Zukauskas A. Phys. Stat. Sol. (a). 176:1999;227.
17. Northrup J.E., Romano L.T., Neugebauer J. Appl. Phys. Lett. 74:1999;2319.
18. Cho Y.-H., Gainer G.H., Fischer A.J., Song J.J., Keller S., Mishra U.K., Denbaars S.P. Appl. Phys. Lett. 73:1998;1370.
19. Kim H.S., Mair R.A., Li J., Lin J.Y., Jiang H.X. Appl. Phys. Lett. 76:2000;1252.