Effective dark current suppression with asymmetric MSM photodetectors in group IV semiconductors

IEEE Photonics Technology Letters

Volumn 15, Issue 11, 2003, Pages 1585-1587

  Chui, Chi On ^a   Okyay, Ali K ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

Author keywords

Germanium; MSM devices; Optical fiber devices; Optical interconnections; Photodetectors; Silicon

Indexed keywords

BANDWIDTH; CAPACITANCE; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRODES; OPTICAL DEVICES; OPTICAL INTERCONNECTS; PHOTORESISTS; SEMICONDUCTING SILICON;

DARK CURRENT SUPPRESSION; ELECTRON-HOLE PAIRS; OPTICAL FIBER DEVICES;

PHOTODETECTORS;

EID: 0242334127     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2003.818683     Document Type: Article

References (7)

1. M. Herrscher, M. Grundmann, E. Dröge, St Kollakowski, E. H. Böttcher, and D. Bimberg, "Epitaxial liftoff InGaAs/InP MSM photodetectors on Si," Electron. Lett., vol. 31, pp. 1383-1384, 1995.
2. R. H. Walden, "A review of recent progress in InP-based optoelectronic integrated circuit receiver front-ends," Int. J. High Speed Electron. Syst., vol. 9, pp. 631-642, 1998.
3. G. Masini, V. Cencelli, L. Colace, F. De Notaristefani, and G. Assanto, "Monolithic integration of near-infrared Ge photodetectors with Si complementary metal-oxide-semiconductor readout electronics," Appl. Phys. Lett., vol. 80, pp. 3268-3270, 2002.
4. J. B. D. Soole and H. Schumacher, "InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications," IEEE J. Quantum Electron., vol. 27, pp. 737-752, Mar. 1991.
5. H. S. Fresser, F. E. Prins, and D. P. Kern, "Low-energy electron detection in microcolumns," J. Vac. Sci. Technol. B, vol. 13, pp. 2553-2555, 1995.
6. W. A. Wohlmuth, M. Arafa, A. Mahajan, P. Fay, and I. Adesida, "InGaAs metal-semiconductor-metal photodetectors with engineered Schottky barrier heights," Appl. Phys. Lett., vol. 69, pp. 3578-3580, 1996.
7. C. O. Chui, S. Ramanathan, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, "Germanium MOS capacitors incorporating ultrathin high-κ gate dielectric," IEEE Electron Device Lett., vol. 23, pp. 473-475, Aug. 2002.