Historical perspective on radiation effects in III-V devices

IEEE Transactions on Nuclear Science

Volumn 50 III, Issue 3, 2003, Pages 704-710

  Weatherford, Todd R ^a   Anderson Jr , Wallace T ^b  

^a NAVAL POSTGRADUATE SCHOOL   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Compound semiconductor; Gallium arsenide; Radiation effects

Indexed keywords

BIPOLAR TRANSISTORS; RADIATION HARDENING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; TECHNOLOGICAL FORECASTING;

COMPOUND SEMICONDUCTOR; RADIATION HARDNESS; SINGLE EVENT EFFECTS;

RADIATION EFFECTS;

EID: 0037770198     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.813124     Document Type: Article

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