Growth and study of thick 3C-SiC epitaxial layers produced by epitaxy on 6H-SiC substrates

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 175-178

  Lebedev, A A ^a   Zelenin, V V ^a   Abramov, P L ^a   Bogdanova, E V ^a   Lebedev, S P ^a   Nel'son D K ^a   Razbirin, B S ^a   Scheglov, M P ^a   Tregubova, A S ^a   Syvajarvi M ^b   Yakimova, R ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Heteroepitaxy; Photoluminescence; Sublimation epitaxy

Indexed keywords

ALUMINUM COMPOUNDS; BINARY ALLOYS; EPITAXIAL GROWTH; GROWTH RATE; NEODYMIUM ALLOYS; PHOTOLUMINESCENCE; SILICON CARBIDE; SODIUM ALLOYS; SUBLIMATION; SUBSTRATES;

DONOR ACCEPTORS; ELECTRONIC DEVICE; PHOTOLUMINESCENCE SPECTRUM; PL SPECTRA; POLYTYPES; SIC SUBSTRATES; SUBLIMATION EPITAXY; X RAY DATA;

NITROGEN COMPOUNDS;

EID: 38549120699     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.175     Document Type: Conference Paper

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