Comparative evaluation of free-standing 3C-SiC crystals

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 229-232

  Polychroniadis, E K ^a   Balloud, C ^b   Juillaguet, S ^b   Ferro, G ^c   Monteil, Y ^c   Camassel, J ^b   Stoemenos, J ^a  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b UNIVERSITÉ MONTPELLIER 2   (France)

^c UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

Author keywords

Free standing 3C SiC; Inversion domain boundaries; Residual doping; Structural properties

Indexed keywords

DEFECT DENSITY; PHOTOLUMINESCENCE; SILICON CARBIDE; STRUCTURAL PROPERTIES; THERMAL STRESS; TRANSMISSION ELECTRON MICROSCOPY;

INVERSION DOMAIN BOUNDARIES; LOW TEMPERATURE PHOTOLUMINESCENCE SPECTROSCOPY; RESIDUAL DOPING;

STACKING FAULTS;

EID: 35148823672     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.229     Document Type: Conference Paper

References (7)

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