Analysis and modeling of lateral non-uniform doping in high-voltage MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Chauhan, Yogesh Singh ^a   Krummenacher, Francois ^a   Anghel, Costin ^a   Gillon, Renuad ^b   Bakeroot, Benoit ^c   Declercq, Michel ^a   Ionescu, Adrian Mihai ^a  

^a EPFL   (Switzerland)

^b ON SEMICONDUCTOR   (United States)

^c GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; FIELD EFFECT TRANSISTORS; MOS DEVICES;

AND MODELING; CAPACITANCE BEHAVIOR; COMPACT MODELING; DOPING GRADIENTS; HIGH VOLTAGES; LATERAL NON-UNIFORM DOPING; LDMOS TRANSISTORS; MOSFET MODELING; MOSFETS;

MOSFET DEVICES;

EID: 46049120054     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.347000     Document Type: Conference Paper

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