IT MEMS memory based on suspended gate MOSFET

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Abele, J N ^a,b   Villaret, A ^b   AGangadharaiah, ^a   Gabioud, C ^a   Ancey, P ^b   Ionescu, A M ^a  

^a EPFL   (Switzerland)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY (SPECIFIC GRAVITY); ELECTRON DEVICES; GATE DIELECTRICS; GATES (TRANSISTOR); SULFATE MINERALS;

CURRENT RATIOS; DIRECT CONTACTS; GATE ELECTRODES; GATE INSULATORS; GATE LEAKAGES; LOGIC STATES; MEMORY CELLS; MICRO-ELECTRO-MECHANICAL; PULL-IN; SG-MOSFET; SUSPENDED-GATE MOSFET;

MOSFET DEVICES;

EID: 46049091018     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346826     Document Type: Conference Paper

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