Three-dimensional numerical analysis of switching properties of high-speed and nonvolatile nanoelectromechanical memory

IEEE Transactions on Electron Devices

Volumn 54, Issue 5, 2007, Pages 1132-1139

  Nagami, Tasuku ^a   Mizuta, Hiroshi ^a,c,f   Momo, Nobuyuki ^a,b   Tsuchiya, Yoshishige ^a,c   Saito, Shin Ichi ^d,g   Arai, Tadashi ^d,g   Shimada, Toshikazu ^c,e   Oda, Shunri ^a,c  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d HITACHI LTD   (Japan)

^e Quantum14 Co Ltd   (Japan)

^f UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^g Japan Science and Technology Agency   (Japan)

Author keywords

Mechanical bistability; Movable gate; NEMS; Nonvolatile memory; Silicon nanodot

Indexed keywords

FINITE ELEMENT METHOD; GATES (TRANSISTOR); MOSFET DEVICES; SCALING LAWS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SWITCHING FREQUENCY; THREE DIMENSIONAL;

BUCKLED FLOATING GATE; MECHANICAL BISTABILITY; NONVOLATILE MEMORY; SWITCHING FORCE;

NEMS;

EID: 34247859035     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.893811     Document Type: Article

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