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Volumn 236, Issue 1-4, 2004, Pages 42-49
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Comparison of electrical and optical parameters of Au/n-Si and Ag/n-Si Schottky barrier photodiodes
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Author keywords
Anti reflection coating; Photodiode; Quantum efficiency; Schottky barrier; Silicon
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Indexed keywords
ANNEALING;
ANTIREFLECTION COATINGS;
CONCENTRATION (PROCESS);
CRYSTAL STRUCTURE;
PASSIVATION;
PHOTODIODES;
QUANTUM EFFICIENCY;
REFLECTION;
SILICON;
SILICON WAFERS;
THICKNESS MEASUREMENT;
DEPOSITION CHAMBERS;
FLAME SENSORS;
SOLAR MONITORING;
THERMAL DEPOSITION;
SCHOTTKY BARRIER DIODES;
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EID: 4043054243
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2004.03.233 Document Type: Article |
Times cited : (15)
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References (15)
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