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Volumn 236, Issue 1-4, 2004, Pages 42-49

Comparison of electrical and optical parameters of Au/n-Si and Ag/n-Si Schottky barrier photodiodes

Author keywords

Anti reflection coating; Photodiode; Quantum efficiency; Schottky barrier; Silicon

Indexed keywords

ANNEALING; ANTIREFLECTION COATINGS; CONCENTRATION (PROCESS); CRYSTAL STRUCTURE; PASSIVATION; PHOTODIODES; QUANTUM EFFICIENCY; REFLECTION; SILICON; SILICON WAFERS; THICKNESS MEASUREMENT;

EID: 4043054243     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.233     Document Type: Article
Times cited : (15)

References (15)
  • 9
    • 36849123485 scopus 로고
    • Surface state and barrier height of metal-semiconductor systems
    • Cowley A.M., Sze S.M., Surface state and barrier height of metal-semiconductor systems. J. Appl. Phys. 36:1965;3212.
    • (1965) J. Appl. Phys. , vol.36 , pp. 3212
    • Cowley, A.M.1    Sze, S.M.2
  • 10
    • 4043106679 scopus 로고
    • EG&G Optoelectronics Silicon photodiode, Canada
    • Applications Notes, EG&G Optoelectronics Silicon photodiode, Canada, 1992.
    • (1992) Applications Notes


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.