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Volumn 32, Issue 5, 2004, Pages 431-437

Nanoelectronic pulse generators based on gated resonant tunnelling diodes

Author keywords

Oscillator; Resonant tunnelling diode; Resonant tunnelling transistor; Voltage controlled oscillator

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; OSCILLATIONS; OSCILLATORS (MECHANICAL); PULSE GENERATORS;

EID: 4744372031     PISSN: 00989886     EISSN: None     Source Type: Journal    
DOI: 10.1002/cta.290     Document Type: Article
Times cited : (12)

References (12)
  • 1
    • 36549097924 scopus 로고
    • Effect of quasibound-state lifetime on the oscillation power of resonant tunneling diodes
    • Brown E, Parker C, Sollner T. Effect of quasibound-state lifetime on the oscillation power of resonant tunneling diodes. Applied Physics Letters 1988; 54:934-936.
    • (1988) Applied Physics Letters , vol.54 , pp. 934-936
    • Brown, E.1    Parker, C.2    Sollner, T.3
  • 6
    • 0030105078 scopus 로고    scopus 로고
    • InP based high performance monostable-bistable transition logic elements (MOBILE'S) using integrated multiple-input resonant-tunnelling devices
    • Chen K, Meazawa K, Yamamoto M. InP based high performance monostable-bistable transition logic elements (MOBILE'S) using integrated multiple-input resonant-tunnelling devices. IEEE Electron Device Letters 1996; 17:127-129.
    • (1996) IEEE Electron Device Letters , vol.17 , pp. 127-129
    • Chen, K.1    Meazawa, K.2    Yamamoto, M.3
  • 7
    • 0036611378 scopus 로고    scopus 로고
    • Realisation of a resonant tunnelling permeable base transistor with optimised overgrown GaAs interfaces
    • Lind E, Wernersson L-E, Pietzonka I, Seifert W. Realisation of a resonant tunnelling permeable base transistor with optimised overgrown GaAs interfaces. IEEE Transactions on Electron Devices 2002; 49:1066-1069.
    • (2002) IEEE Transactions on Electron Devices , vol.49 , pp. 1066-1069
    • Lind, E.1    Wernersson, L.-E.2    Pietzonka, I.3    Seifert, W.4
  • 10
    • 4744339260 scopus 로고    scopus 로고
    • Resonant tunneling permeable base transistors with high transconductance
    • accepted for publication October 2004
    • Lind E, Lindström P, Wernersson L-E. Resonant tunneling permeable base transistors with high transconductance. IEEE Electron Device Letters 2004, (accepted for publication October 2004).
    • (2004) IEEE Electron Device Letters
    • Lind, E.1    Lindström, P.2    Wernersson, L.-E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.