-
1
-
-
36549097924
-
Effect of quasibound-state lifetime on the oscillation power of resonant tunneling diodes
-
Brown E, Parker C, Sollner T. Effect of quasibound-state lifetime on the oscillation power of resonant tunneling diodes. Applied Physics Letters 1988; 54:934-936.
-
(1988)
Applied Physics Letters
, vol.54
, pp. 934-936
-
-
Brown, E.1
Parker, C.2
Sollner, T.3
-
2
-
-
34848900870
-
Oscillations up to 712 GHz in InAs/AlSb resonat-tunneling diodes
-
Brown E, Söderström J, Parker C, Mahoney L, Molvar K, McGill T. Oscillations up to 712 GHz in InAs/AlSb resonat-tunneling diodes. Applied Physics Letters 1991; 58:2291-2293.
-
(1991)
Applied Physics Letters
, vol.58
, pp. 2291-2293
-
-
Brown, E.1
Söderström, J.2
Parker, C.3
Mahoney, L.4
Molvar, K.5
McGill, T.6
-
3
-
-
0001047262
-
A monolithic 4-Bit 2-Gsps resonant tunneling analog-to-digital converter
-
Broekart TPE, Brar B, van der Vagt JPA, Seabaugh AC, Moise TS, Morris FJ, Beam EA, Frazier GA. A monolithic 4-Bit 2-Gsps resonant tunneling analog-to-digital converter. IEEE Journal of Solid State Circuits 1998; 33:1342-1349.
-
(1998)
IEEE Journal of Solid State Circuits
, vol.33
, pp. 1342-1349
-
-
Broekart, T.P.E.1
Brar, B.2
Van Der Vagt, J.P.A.3
Seabaugh, A.C.4
Moise, T.S.5
Morris, F.J.6
Beam, E.A.7
Frazier, G.A.8
-
4
-
-
0032265924
-
Transistors and tunnel diodes for analog/mixed-signal circuits and embedded memory
-
Seabaugh A, Deng X, Blake T, Brar B, Broekart T, Lake R, Morris F, Frazier G. Transistors and tunnel diodes for analog/mixed-signal circuits and embedded memory. IEEE International Electron Device Meeting 1998; 98:429-432.
-
(1998)
IEEE International Electron Device Meeting
, vol.98
, pp. 429-432
-
-
Seabaugh, A.1
Deng, X.2
Blake, T.3
Brar, B.4
Broekart, T.5
Lake, R.6
Morris, F.7
Frazier, G.8
-
5
-
-
0024750508
-
Quantum functional devices: Resonant-tunneling transistors, circuits with reduced complexity, and multiple-valued logic
-
Capasso F, Sen S, Beltram F, Lunardi L, Vengurlekar A, Smith P, Shah N, Malik R, Cho A. Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple-valued logic. IEEE Transaction on Electron Devices 1989; 36:2065-2081.
-
(1989)
IEEE Transaction on Electron Devices
, vol.36
, pp. 2065-2081
-
-
Capasso, F.1
Sen, S.2
Beltram, F.3
Lunardi, L.4
Vengurlekar, A.5
Smith, P.6
Shah, N.7
Malik, R.8
Cho, A.9
-
6
-
-
0030105078
-
InP based high performance monostable-bistable transition logic elements (MOBILE'S) using integrated multiple-input resonant-tunnelling devices
-
Chen K, Meazawa K, Yamamoto M. InP based high performance monostable-bistable transition logic elements (MOBILE'S) using integrated multiple-input resonant-tunnelling devices. IEEE Electron Device Letters 1996; 17:127-129.
-
(1996)
IEEE Electron Device Letters
, vol.17
, pp. 127-129
-
-
Chen, K.1
Meazawa, K.2
Yamamoto, M.3
-
7
-
-
0036611378
-
Realisation of a resonant tunnelling permeable base transistor with optimised overgrown GaAs interfaces
-
Lind E, Wernersson L-E, Pietzonka I, Seifert W. Realisation of a resonant tunnelling permeable base transistor with optimised overgrown GaAs interfaces. IEEE Transactions on Electron Devices 2002; 49:1066-1069.
-
(2002)
IEEE Transactions on Electron Devices
, vol.49
, pp. 1066-1069
-
-
Lind, E.1
Wernersson, L.-E.2
Pietzonka, I.3
Seifert, W.4
-
8
-
-
0036506062
-
Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm
-
Wernersson L-E, Georgsson K, Gustafsson A, Löofgren A, Montelius L, Nilsson N, Pettersson H, Seifert W, Samuelson L. Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm. Journal of Vacuum Science and Technology B 2002; 20:580-589.
-
(2002)
Journal of Vacuum Science and Technology B
, vol.20
, pp. 580-589
-
-
Wernersson, L.-E.1
Georgsson, K.2
Gustafsson, A.3
Löofgren, A.4
Montelius, L.5
Nilsson, N.6
Pettersson, H.7
Seifert, W.8
Samuelson, L.9
-
9
-
-
0034504523
-
MOVPE overgrowth of metallic features for realisation of 3D metal-semiconductor quantum devices
-
Wemersson L-E, Borgström M, Gustafson B, Gustafsson A, Jarlskog L, Malm J-O, Litwin A, Samuelson L, Seifert W. MOVPE overgrowth of metallic features for realisation of 3D metal-semiconductor quantum devices. Journal of Crystal Growth 2000; 221:704-712.
-
(2000)
Journal of Crystal Growth
, vol.221
, pp. 704-712
-
-
Wemersson, L.-E.1
Borgström, M.2
Gustafson, B.3
Gustafsson, A.4
Jarlskog, L.5
Malm, J.-O.6
Litwin, A.7
Samuelson, L.8
Seifert, W.9
-
10
-
-
4744339260
-
Resonant tunneling permeable base transistors with high transconductance
-
accepted for publication October 2004
-
Lind E, Lindström P, Wernersson L-E. Resonant tunneling permeable base transistors with high transconductance. IEEE Electron Device Letters 2004, (accepted for publication October 2004).
-
(2004)
IEEE Electron Device Letters
-
-
Lind, E.1
Lindström, P.2
Wernersson, L.-E.3
|