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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 2, 2002, Pages 580-589

Epitaxially overgrown, stable W-GaAs schottky contacts with sizes down to 50 nm

(10) Wernersson, L E a Georgsson, K a Gustafsson, A a Lofgren A a Montelius, L a Nilsson, N a Pettersson, H a Seifert, W a Samuelson, L a Malm, J O b

a LUND UNIVERSITY (Sweden)

b LUND UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC SPACE CHARGE; ELECTRON BEAMS; EVAPORATION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PROCESSING; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN;

SCHOTTKY CONTACTS;

ELECTRIC CONTACTS;

EID: 0036506062 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1454128 Document Type: Article

Times cited : (9)

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