A physics based model for the RTD quantum capacitance

IEEE Transactions on Electron Devices

Volumn 50, Issue 3, 2003, Pages 785-789

  Lake, Roger ^a   Yang, Junjie ^a  

^a University of California Riverside   (United States)

Author keywords

Capacitance; Circuit modeling; Resonant tunnel diodes; Semiconductor device modeling; Tunnel diode oscillators

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; QUANTUM THEORY; RESONANT TUNNELING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; TUNNEL DIODE OSCILLATORS;

CIRCUIT MODELING; QUANTUM CAPACITANCE; RESONANT TUNNELING DIODE;

TUNNEL DIODES;

EID: 0037560888     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.811390     Document Type: Article

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