Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces

IEEE Transactions on Electron Devices

Volumn 49, Issue 6, 2002, Pages 1066-1069

  Lind, Erik ^a   Wernersson, Lars Erik ^a   Pietzonka, Ines ^a,b   Seifert, Werner ^a  

^a LUND UNIVERSITY   (Sweden)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

Field effect transistors; Gallium arsenide; Resonant tunneling transistors; Surface cleaning; Tungsten

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; HETEROJUNCTIONS; INTERFACES (MATERIALS); RESONANT TUNNELING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

RESONANT TUNNELING TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 0036611378     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1003746     Document Type: Article

References (16)

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