Resonant tunneling permeable base transistors with high transconductance

IEEE Electron Device Letters

Volumn 25, Issue 10, 2004, Pages 678-680

  Lind, Erik ^a   Lindström, Peter ^a   Wernersson, Lars Erik ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HETEROJUNCTIONS; RESONANT TUNNELING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE; TUNGSTEN; TUNNEL DIODES;

GATE VOLTAGE; PEAK CURRENTS; PERMEABLE BASE TRANSISTORS; RESONANT TUNNELING TRANSISTORS; TUNGSTEN GATE;

TRANSISTORS;

EID: 4744339260     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.835159     Document Type: Article

References (10)

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