Design and realization of resonant tunneling permeable base transistors

IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn 2003-January, Issue , 2003, Pages 227-228

  Lindstrom P ^a   Lind, E ^a   Wemersson, L E ^b  

^a LUND UNIVERSITY   (Sweden)

^b University of Notre Dame   (United States)

Author keywords

Capacitance; Current density; Doping; Gallium arsenide; Parameter estimation; Physics; Resonant tunneling devices; Semiconductor process modeling; Solid state circuits; Transconductance

Indexed keywords

EID: 4744369739     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.2003.1239988     Document Type: Conference Paper

References (2)

1. E. Lind, et al, IEEE Trans. Electron Devices, vol 49, p. 1066 (2002)
2. C. O. Bozler and G. D. Alley, IEEE Trans. Electron Devices, vol. ED-27, p. 1128 (1980)