Ge-nanodot multilayer nonvolatile memories

Nanotechnology

Volumn 19, Issue 30, 2008, Pages

  Hong, Seung Hui ^a   Kim, Min Choul ^a   Jeong, Pil Seong ^a   Choi, Suk Ho ^a   Kim, Kyung Joong ^b  

^a Kyung Hee University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; ION BOMBARDMENT; NANOSTRUCTURED MATERIALS; SILICON COMPOUNDS; SPUTTER DEPOSITION; SPUTTERING;

ION BEAM SPUTTERING DEPOSITION; MULTILAYER (ML); NANO DOTS; NANODOTS (ND); NON-VOLATILE MEMORIES (NVM); SELF-ASSEMBLED; ULTRA-SMALL;

MULTILAYERS;

GERMANIUM; QUANTUM DOT; SILICON DIOXIDE; SILICONE;

ARTICLE; ELECTRIC CAPACITANCE; ELECTRIC POTENTIAL; PARTICLE SIZE; PRIORITY JOURNAL; ROOM TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; VELOCITY;

EID: 47249139882     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/30/305203     Document Type: Article

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