Effects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVD

Journal of Physics D: Applied Physics

Volumn 41, Issue 12, 2008, Pages

  Yang, X L ^a   Chen, Z T ^a   Wang, C D ^a   Huang, S ^a   Fang, H ^a   Zhang, G Y ^a   Chen, D L ^b   Yan, W S ^c  

^a PEKING UNIVERSITY   (China)

^b INSTITUTE OF HIGH ENERGY PHYSICS   (China)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; MANGANESE; MANGANESE COMPOUNDS; NITROGEN; VACANCIES;

MN DOPING; NITROGEN VACANCIES;

NONMETALS;

EID: 47249088604     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/12/125002     Document Type: Article

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