Manganese-induced long-range lattice disorder and vacancy formation in metal-organic chemical vapor deposition grown and ion-implanted Ga 1-x Mn xN

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 4, 2006, Pages 1640-1643

  Fenwick, William E ^a   Asghar, Ali ^a   Gupta, Shalini ^a   Kang, Hun ^a   Strassburg, Martin ^b   Dietz, Nikolaus ^b   Graham, Samuel ^c   Kane, Matthew H ^a,d   Ferguson, Ian T ^a,d  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b GEORGIA STATE UNIVERSITY   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^d Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE INTEGRITY; ELECTRONIC DEFECTS; EPILAYERS; LATTICE DISORDER; METAL-ORGANIC; STRUCTURAL PROPERTIES;

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; FERROMAGNETISM; ION IMPLANTATION; MANGANESE; NITROGEN; RAMAN SPECTROSCOPY; X RAY DIFFRACTION;

GALLIUM ALLOYS;

EID: 33745498470     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2201052     Document Type: Article

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