Multi-field simulations and characterization of CMOS-MEMS high-temperature smart gas sensors based on SOI technology

Journal of Micromechanics and Microengineering

Volumn 18, Issue 7, 2008, Pages

  Lu, Chih Cheng ^a   Liao, Kuan Hsun ^a   Udrea, F ^b   Covington, J A ^c   Gardner, J W ^c  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SENSORS; COMPOSITE MICROMECHANICS; DETECTORS; DYNAMIC RESPONSE; ELECTRIC POWER UTILIZATION; FORMING; GAS DETECTORS; GASES; HEALTH; HEATING EQUIPMENT; MECHANICS; MEMS; MICROELECTROMECHANICAL DEVICES; MODELS; NONMETALS; PHOTORESISTS; POLYSILICON; SENSORS; SILICON; SILICON WAFERS; SPEED; STRESSES; TEMPERATURE MEASUREMENT; THERMOMECHANICAL TREATMENT; THREE DIMENSIONAL;

CMOS PROCESSING; CMOS-MEMS; COUPLED SIMULATIONS; DEVICE CHARACTERIZATION; FULL INTEGRATION; GAS SENSORS; HIGH SENSITIVITY (HS); HIGH TEMPERATURE (HT); IN SITU TEMPERATURE MEASUREMENT; LOW-POWER CONSUMPTION; MECHANICAL CHARACTERISTICS; MECHANICAL SIMULATIONS; MICRO HEATERS; MICRO HOTPLATE (MHP); MICRO-HEATERS; MICROMACHINING TECHNIQUES; MOSFETS; MULTI-FIELD; PHYSICAL MODEL (PM); PIEZORESISTIVE EFFECTS; POLYSILICON RESISTORS; POWER CONSUMPTION (CE); SELF-HEATING; SENSOR DEVICES; SENSOR STRUCTURES; SILICON ON INSULATOR (SOI) WAFERS; SOI TECHNOLOGY; TRANSDUCING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 47249084313     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/18/7/075010     Document Type: Article

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