Improved TMAH Si-etching solution without attacking exposed aluminum

Sensors and Actuators, A: Physical

Volumn 89, Issue 1-2, 2001, Pages 135-141

  Yan, Guizhen ^b   Chan, Philip C H ^a   Hsing, I Ming ^a   Sharma, Rajnish K ^a   Sin, Johnny K O ^a   Wang, Yangyuan ^b  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; ALUMINUM; AMMONIUM COMPOUNDS; DISSOLUTION; METALLIZING; PROTECTIVE COATINGS; SILICON; SURFACE ROUGHNESS;

AMMONIUM PEROXODISULFATE; ETCHANT; SILICON ETCHING RATE; TETRAMETHYL AMMONIUM HYDROXIDE;

ETCHING;

EID: 0035280941     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(00)00546-X     Document Type: Article

References (8)

1. Tabata O., Asahi R., Funabashi H., Shimaoka K., Sugiyama S. Anisotropic etching of silicon in TMAH solution. Sensors and Actuators A. 34:1992;51-57.
2. G.T.A. Kovacs, N.I. Maluf, K.E. Petersen, Bulk micromachning of silicon, Proc. IEEE 86 (8)1998.
3. Merlos A., Acero M., Bausells J., Esteve J. TMAH/IPA anisotropic etching characteristics. Sensors and Actuators A. 37-38:1993;737-743.
4. Tabata O. PH-controlled TMAH etchants for silicon micromachining. Sensors and Actuators A. 53:1996;335-339.
5. E.H.K. lassen, R.J. Reay, C. Storment, J. Audy, P. Henry, A.P. Brokaw, G.T.A. Kovacs, Micromachined thermally isolated circuits, in: Proceedings of the 1996 Solid-State Sensor and Actuator Workshop, Hilton Head Island, SC, 1996, pp. 127-131.
6. lassen E.H.K., Reay R.J., Kovacs G.T.A. Diode-based thermal rms converter with on-chip circuitry fabricated using CMOS technology. Sensors and Actuators A. 52:1996;33-40.
7. Lee S.R., Babic D. Investigation of AL selectivity in Si-doped tetramethyl ammonium hydroxide solutions by Raman spectroscopy. J. Electrochem. Soc. 146:1999;4213-4218.
8. Thong J.T.L., Choi W.K., Chong C.W. TMAH etching of silicon and the interaction of etching parameters. Sensors and Actuators A. 63:1997;243-249.