Effect of growth gas flow rate on the defects density of SiC single crystal

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 29, Issue 5, 2008, Pages 851-854

  Yang, Ying ^a   Lin, Tao ^a   Chen, Zhiming ^a  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Defect; Etching; PVT; SiC

Indexed keywords

AERODYNAMICS; CRYSTAL DEFECTS; CRYSTALLOGRAPHY; CRYSTALS; DEFECT DENSITY; DISLOCATIONS (CRYSTALS); ETCHING; FLOW OF GASES; FLOW RATE; GAS DYNAMICS; POWDERS; SILICON; SINGLE CRYSTALS;

BULK CRYSTALS; DEFECT SELECTIVE ETCHING; DEFECTS DENSITY; ETCH PITS; ETCHING RATES; GAS FLOW RATES; GROWTH PROCESSES; HEXAGONAL PITS; HIGH GROWTH; SCREW DISLOCATIONS; SIC SINGLE CRYSTAL;

SILICON CARBIDE;

EID: 47049113122     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. Chen L, Guy O J, Jennings M R, et al. Study of a novel Si/SiC hetero-junction MOSFET. Solid-State Electron, 2007, 51(5): 662
2. Chen W Z, Lee K, Capano M A. Growth and characterization of nitrogen-doped C-face 4H-SiC epilayers. J Cryst Growth, 2006, 297(2): 265
3. Salah T B, Garrab H, Ghedira S, et al. A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices. Superlattices and Microstructures, 2006, 40(4-6): 580
4. Treu M, Rupp R, Blaschitz P, et al. Commercial SiC device processing: status and requirements with respect to SiC based power devices. Superlattices and Microstructures, 2006, 40(4-6): 380
5. Gao Z Y, Hao Y, Zhang J C, et al. Observation of dislocation etch pits in GaN epilayers by atomic force microscopy and scanning electron microscopy. Chinese Journal of Semiconductors, 2007, 28(4): 473
6. Yakimova R, Hylen A L, Tuominen M, et al. Preferential etching of SiC crystals. Diamond and Related Materials, 1997, 6(10): 1456
7. Siche D, Klimm D, Holzel T, et al. Reproducible defect etching of SiC single crystals. J Cryst Growth, 2004, 270(1/2): 1
8. Rost H J, Schmidbauer M, Siche D, et al. Polytype stability and microstructural characterization of silicon carbide epitaxial films grown on [1120] and [0001] oriented silicon carbide substrates. J Cryst Growth, 2006, 36(4): 285
9. Sakwe S A, Muller R, Wellmann P J. Optimization of KOH etching parameters for quantitative defect recognition in n-and p-type doped SiC. J Cryst Growth, 2006, 289: 520