A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 580-587

  Ben Salah, Tarek ^a,b   Garrab, Hatem ^b   Ghedira, Sami ^b   Allard, Bruno ^a   Risaletto, Damien ^a   Raynaud, Christophe ^a   Besbes, Kamel ^b   Morel, Hervé ^a  

^a Univ Claude Bernard Lyon1   (France)

^b FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; SEMICONDUCTOR DIODES; SILICON CARBIDE;

DOPING CONCENTRATION; EPITAXIAL LAYERS; POWER BIPOLAR DEVICES;

BIPOLAR SEMICONDUCTOR DEVICES;

EID: 33845214758     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.06.013     Document Type: Article

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