The semiconductor laser: A thirty-five-year perspective

Proceedings of the IEEE

Volumn 85, Issue 11, 1997, Pages 1678-1693

  Holonyak, N ^a,b,c  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b Physical Properties of Semiconductors   (United States)

^c NATIONAL ACADEMY OF ENGINEERING   (United States)

Author keywords

Al bearing iii v oxide; Carrier injection; Direct gap recombination; Energy gap engineering; Impurity induced layer disordering

Indexed keywords

ENERGY GAP; LIGHT EMITTING DIODES; LIQUID PHASE EPITAXY; OPTOELECTRONIC DEVICES; QUANTUM EFFICIENCY; QUANTUM WELL LASERS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

CARRIER INJECTION; DIRECT GAP RECOMBINATION; STIMULATED EMISSION; VERTICAL CAVITY SURFACE EMITTING LASERS; WET OXIDATION;

SEMICONDUCTOR LASERS;

EID: 0031271414     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/5.649645     Document Type: Article

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