High luminous flux semiconductor wafer-bonded AIGalnP/GaP large-area emitters

Electronics Letters

Volumn 30, Issue 21, 1994, Pages 1790-1792

  Kish, F A ^a   De Fevere, D C ^a   Vanderwater, D A ^a   Trott, G R ^b   Weiss, R J ^a   Major, J S ^c  

^a HEWLETT PACKARD COMPANY   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

^c SDL INC   (United States)

Author keywords

Gallium phosphide; Light emitting diodes; Wafer bonding

Indexed keywords

BONDING; ELECTRONICS PACKAGING; LASER PULSES; LIGHT SOURCES; MICROPROCESSOR CHIPS; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

GALLIUM PHOSPHIDE; LUMINOUS FLUXES; WAFER BONDING;

LIGHT EMITTING DIODES;

EID: 0028530007     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19941232     Document Type: Article

References (5)

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