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Volumn 6, Issue 6, 2000, Pages 1040-1050

III-V semiconductor heterojunction devices grown by metalorganic chemical vapor deposition

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTODETECTORS; QUANTUM WELL LASERS; SEMICONDUCTOR MATERIALS; SOLAR CELLS;

EID: 0034313056     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.902153     Document Type: Article
Times cited : (31)

References (16)
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    • The use of metalorganics in the preparation of semiconductor materials: Growth on insulating substrates
    • H. M. Manasevit, "The use of metalorganics in the preparation of semiconductor materials: Growth on insulating substrates," J. Cryst. Growth, vol. 13/14, pp. 306-314, 1972.
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    • Manasevit, H.M.1
  • 9
    • 0014613146 scopus 로고
    • Epitaxial gallium arsenide from trimethyl gallium and arsine
    • P. Rai-Choudhury, "Epitaxial gallium arsenide from trimethyl gallium and arsine," J. Electrochem. Soc., vol. 116, no. 12, pp. 1745-1746, 1969.
    • (1969) J. Electrochem. Soc. , vol.116 , Issue.12 , pp. 1745-1746
    • Rai-Choudhury, P.1
  • 10
    • 0015630466 scopus 로고
    • Epitaxial growth and characterization of pyrolytic grown GaAsP for electroluminescent devices
    • T. Saitoh and S. Minagawa, "Epitaxial growth and characterization of pyrolytic grown GaAsP for electroluminescent devices," J. Electrochem. Soc., vol. 120, pp. 656-665, 1973.
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    • Saitoh, T.1    Minagawa, S.2
  • 11
    • 0015670866 scopus 로고
    • Properties of epitaxial gallium arsenide from trimethylgallium and arsine
    • S. Ito, T. Shinohara, and Y. Seki, "Properties of epitaxial gallium arsenide from trimethylgallium and arsine," J. Electrochem. Soc., vol. 120, no. 10, pp. 1419-1423, 1973.
    • (1973) J. Electrochem. Soc. , vol.120 , Issue.10 , pp. 1419-1423
    • Ito, S.1    Shinohara, T.2    Seki, Y.3
  • 12
    • 33646389613 scopus 로고
    • High-efficiency GaAlAs-GaAs heterostructure solar cells grown by metalorganic chemical vapor deposition
    • R. D. Dupuis, P. D. Dapkus, R. D. Yingling, and L. A. Moudy, "High-efficiency GaAlAs-GaAs heterostructure solar cells grown by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 31, no. 3, pp. 201-203, 1977.
    • (1977) Appl. Phys. Lett. , vol.31 , Issue.3 , pp. 201-203
    • Dupuis, R.D.1    Dapkus, P.D.2    Yingling, R.D.3    Moudy, L.A.4
  • 13
    • 84884596263 scopus 로고
    • Room-temperature operation of GaAlAs-GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition
    • Cornell University, Ithaca, NY, June
    • R. D. Dupuis, "Room-temperature operation of GaAlAs-GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition," Late News Paper presented at 35th Annual Device Research Conference, Cornell University, Ithaca, NY, June 1977.
    • (1977) Late News Paper Presented at 35th Annual Device Research Conference
    • Dupuis, R.D.1
  • 14
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    • xAs-GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition
    • xAs-GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 31, no. 7, pp. 466-468, 1977.
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  • 15
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    • xAs-GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition
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  • 16
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.