Surface acoustic waves in reverse-biased AlGaN/GaN heterostructures

IEEE Transactions on Electron Devices

Volumn 55, Issue 7, 2008, Pages 1585-1591

  Shigekawa, Naoteru ^a   Nishimura, Kazumi ^a   Yokoyama, Haruki ^a   Hohkawa, Kohji ^b  

^a NTT CORPORATION   (Japan)

^b KANAGAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AlGaN GaN; Heterostructure; Interdigital transducer (IDT); SAW filter; Surface acoustic wave (SAW); Tripletransit echo (TTE)

Indexed keywords

ACOUSTIC SURFACE WAVE FILTERS; ACOUSTIC WAVE VELOCITY; ACOUSTIC WAVES; ACOUSTICS; ACOUSTOELECTRIC EFFECTS; CARBON DIOXIDE ARC WELDING; CRYSTALS; ELASTIC WAVES; ELECTRIC CURRENTS; GALLIUM NITRIDE; OHMIC CONTACTS; PHOTOACOUSTIC EFFECT; SAWING; THRESHOLD VOLTAGE; ULTRASONIC TRANSDUCERS; WAVE FILTERS; WAVES;

(PL) PROPERTIES; ALGAN/GAN HETEROSTRUCTURES; INPUT CAPACITANCE; INTER DIGITAL TRANSDUCER (IDT); RAYLEIGH; RAYLEIGH MODE; REVERSE BIASES; REVERSE-BIASED; SAPPHIRE SUBSTRATES; SAW FILTERS; SCHOTTKY; SEZAWA MODES; SPATIAL VARIATIONS; SURFACE ACOUSTIC WAVES (SAW);

ACOUSTIC SURFACE WAVE DEVICES;

EID: 46649118648     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.923565     Document Type: Article

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