Effects of crystalline regrowth on dopant profiles in preamorphized silicon

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 688-692

  Hopstaken, M J P ^a   Tamminga, Y ^a   Verheijen, M A ^a   Duffy, R ^a   Venezia, V C ^a   Heringa, A ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Dopant segregation; Shallow junctions; SIMS depth profiling; Solid phase epitaxial regrowth

Indexed keywords

AMORPHOUS SILICON; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

DOPANT SEGREGATION; SECONDARY ION MASS SPECTROMETRY (SIMS) DEPTH PROFILING; SHALLOW JUNCTIONS; SOLID PHASE EPITAXIAL GROWTH;

SURFACE CHEMISTRY;

EID: 2942562279     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.184     Document Type: Conference Paper

References (9)

1. B.J. Pawlak, R. Lindsay, R. Surdeanu, P.A. Stolk, K. Maex, X. Pages, in: Proceedings of the 14th International Conference on Ion Implantation Technology, New Mexico, 2002.
2. Dowsett M.G. Appl. Surf. Sci. 203/204:2003;5.
3. Janssens T., Huyghebaert C., Vandervorst W., Gildenpfennig A., Brongersma H.H. Appl. Surf. Sci. 203/204:2003;30.
4. S. Corcoran, P. Zimmerman, E. Niehuis, in: A. Benninghoven, P. Bertrand, H.-N. Migeon, H.N. Werner (Eds.), Proceedings of the SIMS XII, Elsevier, Amsterdam, 2000, p. 21.
5. J.G.M. van Berkum, in: A. Benninghoven, P. Bertrand, H.-N. Migeon, H.N. Werner (Eds.), Proceedings of the SIMS XII, Elsevier, Amsterdam, 2000, p. 55.
6. Grehl T., Möllers R., Niehuis E. Appl. Surf. Sci. 203/204:2003;277.
7. Jain S.C., Schoenmaker W., Lindsay R., Stolk P.A., Decoutere S., Willander M., Maes H.E. J. Appl. Phys. 91:2002;8919.
8. Wang H.C.H., Wang C.C., Chang C.S., Wang T., Griffin P., Diaz C. IEEE Electron Device Lett. 22:2001;65.
9. Duffy R., Venezia V.C., Heringa A., Hüsken T.W.T., Hopstaken M.J.P., Cowern N.E.B., Griffin P.B., Wang C.C. Appl. Phys. Lett. 82:2003;3647.