A bilayer diffusion barrier of ALD-Ru/ALD-TaCN for direct plating of Cu

Journal of the Electrochemical Society

Volumn 155, Issue 8, 2008, Pages

  Kim, Soo Hyun ^a,d   Kim, Hyun Tae ^a   Yim, Sung Soo ^b   Lee, Do Joong ^b   Kim, Ki Su ^b   Kim, Hyun Mi ^b   Kim, Ki Bum ^b   Sohn, Hyunchul ^c  

^a Yeungnam University   (South Korea)

^b Seoul National University   (South Korea)

^c Yonsei University   (South Korea)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; COPPER ALLOYS; DIFFUSION; DIFFUSION BARRIERS; ELECTRIC RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT; EPITAXIAL GROWTH; FILM GROWTH; HEALTH; NANOSTRUCTURED MATERIALS; PLASMA DIAGNOSTICS; PLASMAS; PLATING; RUTHENIUM; SEMICONDUCTOR DOPING; SILICON; STEEL ANALYSIS; TANTALUM; THICK FILMS; TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY; WEIGHT CONTROL; X RAY DIFFRACTION ANALYSIS;

AMORPHOUS STRUCTURES; ANNEALING TEMPERATURE (TA); ATOMIC LAYER DEPOSITED (ALD); AUGER ELECTRONS; BARRIER PERFORMANCE; BI LAYERS; CU DIFFUSION; DIRECT PLATING; ELECTROCHEMICAL SOCIETY (ECS); H2 PLASMA; INTERFACIAL REACTIONS; RU THIN FILMS; SHEET RESISTANCE MEASUREMENTS; SI(2 1 1) SUBSTRATES; X-RAY DIFFRACTOMETRY (XRD);

COPPER;

EID: 46649085712     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2940447     Document Type: Article

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