Evaluation of process parameter space of bulk FinFETs using 3D TCAD

Microelectronic Engineering

Volumn 85, Issue 7, 2008, Pages 1529-1539

  Nawaz, Muhammad ^a   Decker, Stefan ^a   Giles, Luis Felipe ^a   Molzer, Wolfgang ^a   Schulz, Thomas ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Bulk FinFETs; FinFETs; Multigate FETs; Process and device simulation; TCAD

Indexed keywords

COMPUTER SIMULATION; DYNAMIC RANDOM ACCESS STORAGE; GATE DIELECTRICS; LEAKAGE CURRENTS; STATIC RANDOM ACCESS STORAGE;

DEVICE SIMULATION; FINFET; MULTIGATE FET; TCAD;

FIELD EFFECT TRANSISTORS;

EID: 46549089291     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.02.014     Document Type: Article

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