Silicon carbonitrides: On the attainability of stable compounds with high nitrogen content

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 4, 2008, Pages 1018-1022

  Rudolphi, M ^a   Baumann, H ^a   Geckle, U ^b   Bruns, M ^b  

^a GOETHE UNIVERSITY   (Germany)

^b KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; CARBON FILMS; CARBON NITRIDE; COMPLEXATION; DEPOSITS; ELECTRON BEAMS; ELECTRON SPECTROSCOPY; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; INFRARED SPECTROSCOPY; ION BOMBARDMENT; ION IMPLANTATION; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; NITROGEN; NUCLEAR REACTORS; PARTICLE BEAMS; PHASE DIAGRAMS; PHOTOELECTRON SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; SILICON COMPOUNDS; SILICON WAFERS; SPECTROSCOPIC ANALYSIS; SPECTROSCOPY; SPECTRUM ANALYSIS; SPUTTERING; THICK FILMS; URANIUM DIOXIDE; VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

(100) SILICON; AREA RATIOS; AUGER ELECTRONS; CARBONITRIDES; CHEMICAL BINDING; ELECTRON-BEAM ANNEALING; ELEMENTAL ANALYSIS (EA); FOURIER TRANSFORM INFRARED (FT-IR); HIGH NITROGEN CONTENT; HIGH VACUUM CONDITIONS; NITROGEN IONS; RESONANT NUCLEAR REACTION ANALYSIS (R NRA); RF MAGNETRONS; RUTHERFORD BACKSCATTERING SPECTROMETRY (RBS); SILICON WAFER SUBSTRATES; SPUTTER GAS; SYNTHESIS (OF CHIRAL IONIC LIQUIDS); TIE LINES; X RAY PHOTOELECTRON SPECTROSCOPY (XPS);

AUGER ELECTRON SPECTROSCOPY;

EID: 46449113993     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2924331     Document Type: Article

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