Ion beam synthesis and characterization of crystalline Si3N4 surface layers

Physica Status Solidi (A) Applied Research

Volumn 194, Issue 1, 2002, Pages 47-55

  Theodossiu, E ^a   Baumann, H ^a   Matz, W ^b   Mucklich A ^b  

^a GOETHE UNIVERSITY   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTALLINE MATERIALS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION BEAMS; ION IMPLANTATION; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

NUCLEAR REACTIONS;

SILICON NITRIDE;

EID: 0036864065     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200211)194:1<47::AID-PSSA47>3.0.CO;2-O     Document Type: Article

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