High purity Si-C-N thin films with tailored composition on the tie line SiC-Si3N4

Diamond and Related Materials

Volumn 16, Issue 4-7 SPEC. ISS., 2007, Pages 1273-1277

  Rudolphi, M ^a,c   Bruns, M ^b   Baumann, H ^a   Geckle, U ^b  

^a GOETHE UNIVERSITY   (Germany)

^b KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^c GNS SCIENCE   (New Zealand)

Author keywords

Ion implantation; Magnetron sputtering; Silicon carbonitride; Surface analysis

Indexed keywords

ANNEALING; ELECTRON BEAMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION IMPLANTATION; MAGNETRON SPUTTERING; SILICON COMPOUNDS; SURFACE ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON BEAM ANNEALING; PHASE FORMATION; SILICON CARBONITRIDE; TERNARY COMPOSITIONS;

THIN FILMS;

EID: 34147172307     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2006.12.037     Document Type: Article

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