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Journal of Applied Physics

Volumn 103, Issue 12, 2008, Pages

Photocarrier radiometric and ellipsometric characterization of ion-implanted silicon wafers

(3) Liu, Xianming a,b Li, Bincheng a Zhang, Xiren a

a INSTITUTE OF OPTICS AND ELECTRONICS (China)

b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ABSORPTION SPECTROSCOPY; AMORPHOUS MATERIALS; AMORPHOUS SILICON; CALCULATIONS; CARRIER TRANSPORT; COSMIC RAYS; ELLIPSOMETRY; PHOTOELECTRICITY; RADIOMETRY; SILICON; SPECTROSCOPIC ELLIPSOMETRY; SPONTANEOUS EMISSION; TRANSPORT PROPERTIES;

(100) SILICON; (P ,P ,T) MEASUREMENTS; (PL) PROPERTIES; AMERICAN INSTITUTE OF PHYSICS (AIP); DOSE DEPENDENCES; FREE-CARRIER ABSORPTION (FCA); HIGH-DOSE IMPLANTATION; ION IMPLANTED SILICON; NON-MONOTONICITY; OPTICAL (PET) (OPET); PHOTO CARRIER RADIOMETRY (PCR); PHOTO CARRIERS; POLY CRYSTALLINE; SINGLE-CRYSTALLINE; SPECTROSCOPIC ELLIPSOMETRY (SE); THEORETICAL CALCULATIONS;

SILICON WAFERS;

EID: 46449111726 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2943268 Document Type: Article

Times cited : (10)

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