Dose-dependence of ion implantation-caused damage in silicon measured by ellipsometry and backscattering spectrometry

Thin Solid Films

Volumn 455-456, Issue , 2004, Pages 404-409

  Fried, M ^a   Petrik, P ^a   Lohner, T ^a   Khanh N Q ^a   Polgar O ^a   Gyulai, J ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

Channeling; Ellipsometry; Ion backscattering; Ion implantation; Silicon

Indexed keywords

AMORPHIZATION; ARGON; DIELECTRIC MATERIALS; ELLIPSOMETRY; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SINGLE CRYSTALS;

BRUGGEMAN EFFECTIVE MEDIUM APPROXIMATION (BEMA); CHANNELING; ION BACKSCATTERING; SPECTROSCOPIC ELLIPSOMETRY;

THIN FILMS;

EID: 17144471681     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.01.027     Document Type: Conference Paper

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