Ion implant dose dependence of photocarrier radiometry at multiple excitation wavelengths

Applied Physics Letters

Volumn 84, Issue 25, 2004, Pages 5219-5221

  Shaughnessy, Derrick ^a   Li, Bincheng ^a   Mandelis, Andreas ^a   Batista, Jerias ^a,b  

^a UNIVERSITY OF TORONTO   (Canada)

^b FEDERAL UNIVERSITY OF MARANHÃO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ANNEALING; BANDWIDTH; CRYSTAL ORIENTATION; ELECTRIC EXCITATION; FREQUENCY MODULATION; HARMONIC GENERATION; INFRARED RADIATION; ION BEAMS; ION IMPLANTATION; LATTICE CONSTANTS; REFRACTIVE INDEX; SILICON WAFERS;

EXCITATION WAVELENGTHS; PHOTOCARRIER RADIOMETRY (PCR); PHOTOGENERATION VOLUME; PHOTOTHERMAL SIGNALS;

RADIOMETRY;

EID: 3142717398     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1765737     Document Type: Article

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