Electromigration behavior of lead-free solder flip chip bumps on NiP/Cu metallization

Journal of Applied Physics

Volumn 103, Issue 12, 2008, Pages

  Jang, J W ^a   Ramanathan, L N ^a   Frear, D R ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BRAZING; CHEMICAL ENGINEERING; COPPER; COPPER ALLOYS; CURRENT DENSITY; ELECTROLESS PLATING; ELECTROMIGRATION; FLIP CHIP DEVICES; LEAD; METAL RECOVERY; METALLIZING; NICKEL; NICKEL ALLOYS; ORES; SILVER; SOLDERED JOINTS; TIN ALLOYS; WELDING;

AMERICAN INSTITUTE OF PHYSICS (AIP); ELECTROLESS; ELECTROMIGRATION BEHAVIOR; FLIP CHIP SOLDER JOINTS; FLIP-CHIP BUMPING; LEAD-FREE SOLDER (SN-3.5AG-0.5CU); METALLIZATION; SELECTIVE DISSOLUTION; SN 0.7CU SOLDER; UNDER BUMP METALLURGY (UBM);

TIN;

EID: 46449088462     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2940133     Document Type: Article

References (18)

1. K. N. Tu, J. Appl. Phys. 0021-8979 10.1063/1.1611263 94, 5451 (2003).
2. K. Zeng and K. N. Tu, Mater. Sci. Eng., R. 0927-796X 10.1016/S0927- 796X(02)00007-4 38, 55 (2002).
3. W. J. Choi, E. C. C. Yeh, and K. N. Tu, J. Appl. Phys. 0021-8979 10.1063/1.1616993 94, 5665 (2003).
4. M. Ding, G. Wang, B. Chao, P. S. Ho, P. Su, and T. Uehling, J. Appl. Phys. 99, 094096 (2006). 0031-8914
5. J. W. Nah, J. O. Suh, and K. N. Tu, J. Appl. Phys. 0021-8979 10.1063/1.1949719 98, 013715 (2005).
6. S. H. Chiu, T. L. Shao, C. Chen, D. J. Yao, and C. Y. Hsu, Appl. Phys. Lett. 0003-6951 10.1063/1.2151255 88, 022110 (2006).
7. ITRS (International Technology Roadmap for Semiconductors) 2005 edition, Assembly and Packaging, Semiconductor Industry Association.
8. D. W. Handerson, T. Gosselin, A. Sarkhel, S. K. Kang, W. K. Choi, D. Y. Shih, C. Goldsmith, and K. J. Puttlitz, J. Mater. Res. 0884-2914 10.1557/JMR.2002.0402 17, 2775 (2002).
9. J. W. Jang, D. R. Frear, T. Y. Lee, and K. N. Tu, J. Appl. Phys. 0021-8979 10.1063/1.1321787 88, 6359 (2000).
10. A. Kumar, Z. Chen, S. G. Mhaisalkar, C. C. Wong, P. S. Teo, and V. Kripesh, Thin Solid Films 504, 410 (2006).
11. L. Zhang, S. Ou, J. Huang, K. N. Tu, S. Gee, and L. Nguyen, Appl. Phys. Lett. 0003-6951 10.1063/1.2158702 88, 012106 (2006).
12. E. C. C. Yeh, W. J. Choi, K. N. Tu, P. Elenius, and H. Balkan, Appl. Phys. Lett. 0003-6951 10.1063/1.1432443 80, 580 (2002).
13. H. Gan and K. N. Tu, J. Appl. Phys. 0021-8979 10.1063/1.1861151 97, 063514 (2005).
14. C. M. Tsai, Y. S. Lai, Y. L. Lin, C. W. Chang, and C. R. Kao, J. Electron. Mater. 35, 1718 (2006). 0361-5235
15. A. T. Wu, A. M. Gusak, K. N. Tu, and C. R. Kao, Appl. Phys. Lett. 0003-6951 10.1063/1.1941456 86, 241902 (2005).
16. A. T. Huang, K. N. Tu, and Y. S. Lai, J. Appl. Phys. 0021-8979 10.1063/1.2227621 100, 033512 (2006).
17. M. O. Alam, B. Y. Wu, Y. C. Chan, and K. N. Tu, Acta Mater. 1359-6454 10.1016/j.actamat.2005.09.031 54, 613 (2006).
18. Y. C. Hu, Y. H. Lin, C. R. Kao, and K. N. Tu, J. Mater. Res. 18, 2544 (2003). 0884-2914