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Journal of Applied Physics

Volumn 103, Issue 12, 2008, Pages

Dielectric breakdown in Co-Fe-B/MgO/Co-Fe-B magnetic tunnel junction

(5) Khan, Ayaz Arif a Schmalhorst, J a Thomas, A a Schebaum, O a Reiss, G a

a BIELEFELD UNIVERSITY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COBALT; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; IONIZATION OF GASES; MAGNETIC DEVICES; METALLIZING; MOSFET DEVICES; SEMICONDUCTOR JUNCTIONS; STEEL ANALYSIS; TUNNEL JUNCTIONS; TUNNELS; WAVEGUIDE JUNCTIONS;

AMERICAN INSTITUTE OF PHYSICS (AIP); ANNEALING TEMPERATURE (TA); APPLIED VOLTAGES; BARRIER THICKNESS; BREAK DOWN VOLTAGE (BDV); DIELECTRIC BREAKDOWN (DB); JUNCTION AREA; MAGNETIC TUNNEL JUNCTION (MTJ); MAGNETIC TUNNEL JUNCTIONS (MTJS); NEGATIVE BIAS; POSITIVE BIAS; TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB); VOLTAGE RAMP;

IRON;

EID: 46449088145 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2939571 Document Type: Article

Times cited : (42)

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